Publications

Bandgap Engineering of Nitrogen-Doped Monolayer WSe2 Superlattice and its Application to Field Effect Transistor

Published in Advanced Electronic Materials, 2026

This research demonstrates that periodic nitrogen substitution in WSe2 enables monotonic bandgap modulation while preserving a clean artificial crystal structure, achieving an ON/OFF current ratio of ~10⁸ at 300 K.

Recommended citation: Yi-Cheng Lo, Liao-Jia Wang, and Yu-Chang Chen. (2026). "Bandgap Engineering of Nitrogen-Doped Monolayer WSe2 Superlattice and its Application to Field Effect Transistor." Advanced Electronic Materials, 2026; 0:200754.
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High-Performance Monolayer WSe2 pFETs Enabled by Precise O-Doping Control

Published in The 6th Symposium on Nano-Device Circuits and Technologies & Joint Developed Project (JDP) Results Presentation, SNDCT 2026, 2026

This research demonstrates the precise control of p-type doping at room temperature in a Monolayer-WSe2 FETs via UVO treatment. By employing Density Functional Theory Calculations, we explore the origins of the performance enhancements of O-doping, yielding great correlation with experimental data. Further this study bridging atomic-scale simulations with large-scale devices.