CV

Education

B.S. in Electro-Physics (4th Year), National Yang Ming Chiao Tung University (NYCU), Expected 2026
- GPA: 4.23/4.30 (Ranked 1st in Department)
- Relevant Courses: 原子尺度量子電子傳導、類比積體電路導論、半導體元件物理、低維系統中的電子傳輸及記憶概念、半導體製程技術等等

Undergraduate Researcher, Dept. of Electrophysics, NYCU (Jan 2025 – Dec 2025)
- Advisor: Prof. Yu-Chang Chen
- Project: First-Principle Calculations of Quantum Transport for 2D Materials
- Investigated periodic nitrogen-doped $WSe_{2}$ superlattices; demonstrated bandgap modulation and near-ideal subthreshold swing reaching the Boltzmann limit[cite: 1].
- Discovered a 45-fold enhancement in thermoelectric figure of merit (ZT) at 100K due to phonon suppression.
Undergraduate Researcher, ECDL Lab, Dept. of Microelectronics, NYCU (Dec 2025 – Present)
- Advisor: Prof. Tsung-En Lee
- Project: Reliability Characterizations and Simulations for 2D Materials
- Integrated ab initio and TCAD simulations to optimize 2D semiconductor device fabrication.
- Modeled oxygen substitutional doping mechanisms in $WSe_{2}$ via $UV-O_{3}$ treatments for advanced gate stack designs.

Summer 2024: R&D Device Team Intern
- United Microelectronic Corporation (UMC)
- Performed electrical measurements and analysis of Hi-R and MoM capacitors.
Spring 2026: Teaching Assistant
- National Yang Ming Chiao Tung University
- Course: Solid State Physics

Simulation Tools: QuantumATK, NanoDCAL, VASP, Quantum Espresso, GTS Solutions, Comphy
Programming & Software: Python, C++, MATLAB, Origin, LabVIEW
Languages:
- English (Fluent): TOEIC 950/990; Speaking/Writing 380/400
- Mandarin (Native)

Y.-C. Lo, L.-J. Wang, and Y.-C. Chen, “Bandgap Engineering of Nitrogen-Doped Monolayer $WSe_{2}$ Superlattice and Its Application to Field Effect Transistors,” Advanced Electronic Materials, 2026[cite: 1].
Y.-C. Lo, L.-J. Wang, and Y.-C. Chen, “Gate-Tunable $WSe_{2}$ Superlattice Nanojunctions for High-Efficiency Thermoelectric Energy Conversion,” (In Review, ACS Applied Nano Materials).
Y.-C. Lo, T.-H. Wei, Y.-W. Hsu, and T.-E. Lee, “Demonstration of High-Performance $AlO_{x}$-Capped Oxygen-Doped Monolayer $WSe_{2}$ p-FETs and First-Principles Investigation of its Atomistic Origins,” SNDCT, 2026.