Bandgap Engineering of Nitrogen-Doped Monolayer WSe2 Superlattice and its Application to Field Effect Transistor
Published in Advanced Electronic Materials, 2026
This study systematically investigates the electronic structures of pristine monolayer $WSe_{2}$ and superlattices with periodic nitrogen substitution. Unlike random doping, which introduces localized in-gap impurity states, periodic substitution facilitates effective bandgap engineering by modulating the gap monotonically with dopant density. We demonstrate that 6-row and 8-row superlattice configurations achieve a balance between a stable operation range and favorable threshold voltages ($V_{g}^{OFF} \approx 0.75$ V), making them promising candidates for future FET integration.
Recommended citation: Yi-Cheng Lo, Liao-Jia Wang, and Yu-Chang Chen. (2026). "Bandgap Engineering of Nitrogen-Doped Monolayer WSe2 Superlattice and its Application to Field Effect Transistor." Advanced Electronic Materials, 2026; 0:200754.
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